H. Klausing

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

J. Aderhold, V. Yu. Davydov, F. Fedler et al. · Journal of Crystal Growth · 2001 · 121 citations

Natural Sciences, Materials Engineering, Materials Science +16

First AlGaN/GaN MOSFET with photoanodic gate dielectric

D. Mistele, T. Rotter, K.S. Röver et al. · Materials Science and Engineering B · 2002 · 48 citations

Engineering, Electrical Engineering, Materials Science +14

Point defects in gamma-irradiated n-GaN

V. V. Emtsev, V. Yu. Davydov, W. V. Lundin et al. · Semiconductor Science and Technology · 2000 · 45 citations

Natural Sciences, Materials Engineering, Materials Science +17

Investigation of Ni/Au-contacts on p-GaN annealed in different atmospheres

D. Mistele, F. Fedler, H. Klausing et al. · Journal of Crystal Growth · 2001 · 32 citations

Engineering, Materials Engineering, Materials Science +12

Strain, morphological, and growth-mode changes in AlGaN single layers at high AlN mole fraction

F. Fedler, R. J. Hauenstein, H. Klausing et al. · Journal of Crystal Growth · 2002 · 16 citations

Engineering, Materials Engineering, Materials Science +16