InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

Experimental and theoretical studies of phonons in hexagonal InN

V. Yu. Davydov, V. V. Emtsev, I. N. Goncharuk et al. · Applied Physics Letters · 1999 · 261 citations

Natural Sciences, Materials Science, Physics +16

Determination of the charge carrier concentration and mobility in n‐gap by Raman spectroscopy

G. Irmer, V. V. Toporov, B. H. Bairamov et al. · physica status solidi (b) · 1983 · 163 citations

Natural Sciences, Materials Science, Physics +17

Structural properties of InN on GaN grown by metalorganic vapor-phase epitaxy

Shigeo Yamaguchi, Michihiko Kariya, Shugo Nitta et al. · Journal of Applied Physics · 1999 · 117 citations

Natural Sciences, Materials Engineering, Materials Science +17

Raman and x-ray studies of InN films grown by metalorganic vapor phase epitaxy

Ming-Chih Lee, Heng-Ching Lin, Yung-Chung Pan et al. · Applied Physics Letters · 1998 · 62 citations

Natural Sciences, Materials Engineering, Materials Science +17

Electrical transport in p-GaN, n-InN and n-InGaN

Wim Geerts, J. D. MacKenzie, C. R. Abernathy et al. · Solid-State Electronics · 1996 · 21 citations

Engineering, Electrical Engineering, Materials Science +12