J. Graul - Concepedia

Author

J. Graul

Leibniz University Hannover

Also Known As

Graul, J., Graul, Jürgen, J Graul, J. Graul, J. M. Graul, J.M. Graul, Jurgen Graul

Publications

3.5K

Citations

H-Index

Concepts

All Affiliations

Leibniz University Hannover Physico-Technical Institute Siemens (Germany)University of Fukui Friedrich Schiller University Jena

About

J. Graul is an author at Leibniz University Hannover specializing in engineering, applied physics, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	15	23	3.2K
2	Applied Physics	15	21	3.2K
3	Natural Sciences	2	2	139
4	Chemistry	2	2	115
5	Computer Engineering	1	1	23

J. Graul

Publications

3.2K

Citations

H-Index

Page 1

	Year	Citations
Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap V. Yu. Davydov, A. A. Klochikhin, R. P. Seĭsyan, physica status solidi (b) Materials SciencePhotoluminescenceEngineeringPhysicsElectron Spectroscopy	2002	985
Phonon dispersion and Raman scattering in hexagonal GaN and AlN V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk, Physical review. B, Condensed matter Materials ScienceAluminium NitridePhonon SymmetryEngineeringPhysics	1998	811
Band Gap of Hexagonal InN and InGaN Alloys V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, physica status solidi (b) Optical MaterialsEngineeringOptical AbsorptionOptoelectronic DevicesBand Gap	2002	306
Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1) V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev, physica status solidi (b) Materials ScienceMaterials EngineeringEngineeringPhysicsCondensed Matter Physics	2002	286
High-performance transistors with arsenic-implanted polysil emitters J. Graul, A. Glasl, H. Murrmann IEEE Journal of Solid-State Circuits Electrical EngineeringEngineeringRf SemiconductorHigh-frequency DeviceNanoelectronics	1976	138
InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates J. Aderhold, V. Yu. Davydov, F. Fedler, Journal of Crystal Growth Materials ScienceEngineeringSapphire SubstratesSurface ScienceApplied Physics	2001	121
Polarization and self-polarization in thin PbZr<sub>1-<i>x</i></sub>Ti<sub><i>x</i></sub>O<sub>3</sub>(PZT) films V. P. Afanasjev, A. A. Petrov, E. A. Tarakanov, Journal of Physics Condensed Matter Materials ScienceSelf-polarization EffectThin Film PhysicsMultiferroicsEngineering	2001	117
Photoinduced oxide film formation on <i>n</i>-type GaN surfaces using alkaline solutions T. Rotter, D. Mistele, J. Stemmer, Applied Physics Letters EngineeringPhoto-electrochemical CellChemistryPotassium HydroxidePhotoelectrochemistry	2000	93
Growth mechanism of polycrystalline β-SiC layers on silicon substrate J. Graul, Estelle Wagner Applied Physics Letters Materials ScienceMaterials EngineeringLayer ThicknessEngineeringSurface Science	1972	52
First AlGaN/GaN MOSFET with photoanodic gate dielectric D. Mistele, T. Rotter, K.S. Röver, Materials Science and Engineering B Electrical EngineeringEngineeringApplied PhysicsAluminum Gallium NitrideGan Power Device	2002	48

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