O. Semchinova

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

V. Yu. Davydov, A. A. Klochikhin, R. P. Seĭsyan et al. · physica status solidi (b) · 2002 · 985 citations

Materials Science, Photoluminescence, Engineering +9

Phonon dispersion and Raman scattering in hexagonal GaN and AlN

V. Yu. Davydov, Yu. É. Kitaev, I. N. Goncharuk et al. · Physical review. B, Condensed matter · 1998 · 811 citations

Materials Science, Aluminium Nitride, Phonon Symmetry +12

Raman and photoluminescence studies of biaxial strain in GaN epitaxial layers grown on 6H–SiC

V. Yu. Davydov, N. S. Averkiev, I. N. Goncharuk et al. · Journal of Applied Physics · 1997 · 372 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +14

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

J. Aderhold, V. Yu. Davydov, F. Fedler et al. · Journal of Crystal Growth · 2001 · 121 citations

Materials Science, Engineering, Sapphire Substrates +8

First AlGaN/GaN MOSFET with photoanodic gate dielectric

D. Mistele, T. Rotter, K.S. Röver et al. · Materials Science and Engineering B · 2002 · 48 citations

Electrical Engineering, Engineering, Applied Physics +4