J. Aderhold

Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap

V. Yu. Davydov, A. A. Klochikhin, R. P. Seĭsyan et al. · physica status solidi (b) · 2002 · 985 citations

Materials Science, Photoluminescence, Engineering +9

Band Gap of Hexagonal InN and InGaN Alloys

V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev et al. · physica status solidi (b) · 2002 · 306 citations · Full text

Optical Materials, Engineering, Optical Absorption +21

Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

V. Yu. Davydov, A. A. Klochikhin, V. V. Emtsev et al. · physica status solidi (b) · 2002 · 286 citations

Materials Science, Materials Engineering, Engineering +9

InN thin films grown by metalorganic molecular beam epitaxy on sapphire substrates

J. Aderhold, V. Yu. Davydov, F. Fedler et al. · Journal of Crystal Growth · 2001 · 121 citations

Materials Science, Engineering, Sapphire Substrates +8

Photoinduced oxide film formation on <i>n</i>-type GaN surfaces using alkaline solutions

T. Rotter, D. Mistele, J. Stemmer et al. · Applied Physics Letters · 2000 · 93 citations

Engineering, Photo-electrochemical Cell, Chemistry +19