Applied Physics Letters · 1998 · 62 citations · 20 references
Natural SciencesMaterials EngineeringMaterials ScienceCondensed Matter PhysicsCrystal StructureThin FilmsDefects In Electronic MaterialsDislocation MechanicsDislocations In SemiconductorsEpitaxial GrowthSemiconductor DefectsX-ray DiffractionCrystalline StructureDislocation PhysicsEpitaxial Film GrowthEpitaxial Thin-film GrowthMetalorganic Vapor Phase EpitaxySpectral Line BroadeningTemperature-dependent GrowthX-ray Diffraction Analysis
Thin InN films were deposited on the (0001) sapphire substrate at various temperatures from 325 to 600 °C by metalorganic vapor phase epitaxy. We used Raman scattering and x-ray diffraction to investigate the film properties and crystalline structures. Significant line broadening, softening and intensity evolution were observed at the growth temperatures between 375 and 450 °C. This can be attributed to the formation of the mixed hexagonal and cubic structures and the related dislocation defects. As the growth temperature is further increased, the hexagonal phase is found to be dominant in the deposited InN film.
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