V. Schwegler

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer, Tamara Ebner, K. Thonke et al. · Physical review. B, Condensed matter · 1999 · 228 citations

Excitonic Transitions, Homoepitaxial Gan Layer, Engineering +13

Temperature dependence of the E2 and A1(LO) phonons in GaN and AlN

A. Link, Karl Bitzer, W. Limmer et al. · Journal of Applied Physics · 1999 · 122 citations

Materials Science, Aluminium Nitride, Electrical Engineering +15

Photoinduced oxide film formation on <i>n</i>-type GaN surfaces using alkaline solutions

T. Rotter, D. Mistele, J. Stemmer et al. · Applied Physics Letters · 2000 · 93 citations

Engineering, Photo-electrochemical Cell, Chemistry +19

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

K. Kornitzer, Tamara Ebner, M. Grehl et al. · physica status solidi (b) · 1999 · 48 citations

Semiconductors, High-resolution Photoluminescence, Wide-bandgap Semiconductor +13

First AlGaN/GaN MOSFET with photoanodic gate dielectric

D. Mistele, T. Rotter, K.S. Röver et al. · Materials Science and Engineering B · 2002 · 48 citations

Electrical Engineering, Engineering, Applied Physics +4