Tamara Ebner

Photoluminescence and reflectance spectroscopy of excitonic transitions in high-quality homoepitaxial GaN films

K. Kornitzer, Tamara Ebner, K. Thonke et al. · Physical review. B, Condensed matter · 1999 · 228 citations

Excitonic Transitions, Homoepitaxial Gan Layer, Engineering +13

High-Resolution Photoluminescence and Reflectance Spectra of Homoepitaxial GaN Layers

K. Kornitzer, Tamara Ebner, M. Grehl et al. · physica status solidi (b) · 1999 · 48 citations

Semiconductors, High-resolution Photoluminescence, Wide-bandgap Semiconductor +13

Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

C. Kirchner, V. Schwegler, Franz Eberhard et al. · Applied Physics Letters · 1999 · 46 citations

Materials Engineering, Materials Science, Electrical Engineering +14

Current limitation after pinch-off in AlGaN/GaN FETs

R. Dietrich, A. Wieszt, Andrei Vescan et al. · MRS Internet Journal of Nitride Semiconductor Research · 2000 · 22 citations · Full text

Effect of Illumination on the Electrical Characteristics of AlGaN/GaN FETs

R. Dietrich, Andrei Vescan, A. Wieszt et al. · physica status solidi (a) · 1999 · 12 citations

Activation Energy, Piezoelectric Algan/gan Fets, Electrical Engineering +13