Franz Eberhard

High brightness LEDs for general lighting applications Using the new ThinGaN™-Technology

Volker Haerle, B. Hahn, S. Kaiser et al. · physica status solidi (a) · 2004 · 73 citations

Engineering, Electrical Engineering, Materials Science +17

Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

C. Kirchner, V. Schwegler, Franz Eberhard et al. · Applied Physics Letters · 1999 · 46 citations

Engineering, Materials Engineering, Materials Science +17

Dry etching of GaN substrates for high-quality homoepitaxy

M. Schauler, Franz Eberhard, C. Kirchner et al. · Applied Physics Letters · 1999 · 43 citations

Engineering, Materials Engineering, Materials Science +17

Increased-area oxidised single-fundamental modeVCSEL with self-aligned shallow etched surface relief

H.J. Unold, M. Grabherr, Franz Eberhard et al. · Electronics Letters · 1999 · 39 citations

Engineering, Electrical Engineering, Materials Science +17

Light extraction technologies for high-efficiency GaInN-LED devices

Volker Haerle, Berthold Hahn, Stephan Kaiser et al. · Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003 · 23 citations

Engineering, Electrical Engineering, Materials Science +17