Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2003 · 23 citations · 0 references
Materials SciencePhotonicsElectrical EngineeringThinfilm LedEngineeringSolid-state LightingWhite OledOptical PropertiesWall Plug EfficiencyApplied PhysicsNew Lighting TechnologyLight-emitting DiodesOptoelectronic DevicesSmall Size LedsMicroelectronicsOptoelectronicsLight Extraction Technologies
Data are presented for an GaInN based thinfilm LED. The LED is fabricated by transferring the epilayers with laser lift off from sapphire to a GaAs host substrate. In combination with efficient surface roughening and highly reflective p-mirror metallisation an extraction efficiency of 70% and wall plug efficiency of 24% at 460nm have been shown. The chips showed 12mW @ 20mA with a Voltage of 3.2V. The technology is scalable from small size LEDs to high current Chips and is being transferred to mass production.