A. Weimar

High brightness LEDs for general lighting applications Using the new ThinGaN™-Technology

Volker Haerle, B. Hahn, S. Kaiser et al. · physica status solidi (a) · 2004 · 73 citations

High Brightness Leds, Electrical Engineering, Optical Materials +15

Investigation of Low-Resistance Metal Contacts on p-Type GaN Using the Linear and Circular Transmission Line Method

A. Weimar, A. Lell, G. Br�derl et al. · physica status solidi (a) · 2001 · 30 citations

Wide-bandgap Semiconductor, Engineering, Optoelectronic Devices +19

Industrial production of GaN and InGaN-light emitting diodes on SiC-substrates

U. Zehnder, A. Weimar, M. Fehrer et al. · Journal of Crystal Growth · 2001 · 30 citations

Electrical Engineering, Solid-state Lighting, Engineering +6

Degradation Analysis of InGaN Laser Diodes

V. K�mmler, G. Br�derl, S. Bäder et al. · physica status solidi (a) · 2002 · 27 citations

Engineering, Laser Applications, Laser Material +17

Correlation of strain, wing tilt, dislocation density, and photoluminescence in epitaxial lateral overgrown GaN on SiC substrates

N. Gmeinwieser, Karl Engl, P. Gottfriedsen et al. · Journal of Applied Physics · 2004 · 26 citations

Materials Science, Wide-bandgap Semiconductor, Electrical Engineering +12