physica status solidi (a) · 2002 · 27 citations · 8 references
EngineeringElectrical EngineeringMaterials ScienceOptoelectronicsSemiconductor DevicesSemiconductor MaterialsLaser DiodesLaser PhysicsOptoelectronic DevicesQuantum WellsSemiconductor Device MaterialsSemiconductor LasersDegradation AnalysisHeat SpreadingPhotoluminescencePhotoluminescence In Quantum WellsQuantum Well Laser DiodesQuantum Well LasersSemiconductor Laser DiodesTemperature Rise Analysis
The current status of InGaN-MQW-laser diodes developed at Osram OS is presented. These lasers are grown on n-conducting SiC, enabling a vertical current path, cleaved facets and excellent heat spreading. The temperature rise during cw operation is measured for different mountings. A p-side up mounted diode with thermal resistance of 18 K/W showed 143 h of cw lasing at 1 mW optical power (T = 25 °C). DC and pulsed aging shows current as main degradation reason compared to heat for InGaN-LDs. Photoluminescence spectra of the quantum wells are being compared before and after degradation caused by current.
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