U. Zehnder

Molecular-beam epitaxy of beryllium-chalcogenide-based thin films and quantum-well structures

A. Waag, F. Fischer, H.‐J. Lugauer et al. · Journal of Applied Physics · 1996 · 212 citations

Engineering, Bete Buffer Layers, Optoelectronic Devices +17

Laser diodes based on beryllium-chalcogenides

A. Waag, Frank Fischer, K. Schüll et al. · Applied Physics Letters · 1997 · 133 citations

Engineering, Laser Science, Laser Applications +16

A combined electro-optical method for the determination of the recombination parameters in InGaN-based light-emitting diodes

Matteo Meneghini, Nicola Trivellin, Gaudenzio Meneghesso et al. · Journal of Applied Physics · 2009 · 126 citations

Optical Materials, Engineering, Optoelectronic Devices +20

High-Temperature Degradation of GaN LEDs Related to Passivation

Matteo Meneghini, Lorenzo-Roberto Trevisanello, U. Zehnder et al. · IEEE Transactions on Electron Devices · 2006 · 88 citations

Electrical Engineering, Activated Failure Mechanisms, Engineering +14

Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

Francesca Rossi, M. Pavesi, Matteo Meneghini et al. · Journal of Applied Physics · 2006 · 87 citations

Optical Materials, Engineering, Ingan∕gan Leds +16