Karl Engl

Composition mapping in InGaN by scanning transmission electron microscopy

Andreas Rosenauer, Thorsten Mehrtens, Knut Müller‐Caspary et al. · Ultramicroscopy · 2011 · 171 citations

Materials Science, Engineering, Electron Microscopy +6

Growth of crack-free GaN on Si(111) with graded AlGaN buffer layers

A. Able, W. Wegscheider, Karl Engl et al. · Journal of Crystal Growth · 2005 · 131 citations

Materials Engineering, Crack-free Gan, Electrical Engineering +7

Microscopic analysis of optical gain in InGaN∕GaN quantum wells

Bernd Witzigmann, Valerio Laino, Mathieu Luisier et al. · Applied Physics Letters · 2006 · 68 citations

Quantum Photonics, Engineering, Qw Gain Description +17

Development of high-efficiency and high-power vertical light emitting diodes

Berthold Hahn, Bastian Galler, Karl Engl · Japanese Journal of Applied Physics · 2014 · 65 citations · Full text

White Oled, Electrical Engineering, Chip Size +14

Comparison of degradation mechanisms of blue‐violet laser diodes grown on SiC and GaN substrates

Michael Furitsch, Christoph Eichler, Karl Engl et al. · physica status solidi (a) · 2006 · 30 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +13