Mathieu Luisier

The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials

Theresia Knobloch, Yu. Yu. Illarionov, Fabian Ducry et al. · Nature Electronics · 2021 · 330 citations · Full text

Electrical Engineering, Performance Limits, Scaled Cmos Devices +9

Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering

Mathieu Luisier, Gerhard Klimeck · Physical Review B · 2009 · 264 citations

Categoryquantum Electronics, Engineering, Nanocomputing +22

Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling

Mathieu Luisier, Gerhard Klimeck · Journal of Applied Physics · 2010 · 178 citations · Full text

Categoryquantum Electronics, Engineering, Semiconductor Physics +18

On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients

Changwook Jeong, Raseong Kim, Mathieu Luisier et al. · Journal of Applied Physics · 2010 · 169 citations · Full text

Engineering, Landauer Versus Boltzmann, Thermoelectrics +23

Quantum transport in two- and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism

Mathieu Luisier, Andreas Schenk, Wolfgang Fichtner · Journal of Applied Physics · 2006 · 165 citations

Quantum Dynamic, Engineering, Charge Transport +21