Concepedia

Author

M. Seyboth

Universität Ulm

Also Known As

M Seyboth, M. Seyboth, Matthias Seyboth, Seyboth, Matthias

33

Publications

290

Citations

9

H-Index

22

Concepts

All Affiliations

Universität UlmLeibniz University HannoverOSRAM (Germany)University of Neuchâtel
MS

About

M. Seyboth is an author at Universität Ulm specializing in engineering, applied physics, and electrical engineering.

Top Concepts

#ConceptH-IndexPublicationsCitations

1

Engineering

7

7

187

2

Applied Physics

7

7

187

3

Electrical Engineering

6

6

177

4

Materials Engineering

2

2

24

5

Materials Science

1

1

10

M. Seyboth

×

9

Publications

224

Citations

9

H-Index

YearCitations

Transient characteristics of gan-based heterostructure field-effect transistors

E. Kohn, I. Daumiller, M. Kunze,

IEEE Transactions on Microwave Theory and Techniques

2003

70

First AlGaN/GaN MOSFET with photoanodic gate dielectric

D. Mistele, T. Rotter, K.S. Röver,

Materials Science and Engineering B

2002

48

Extraction Efficiency of GaN-Based LEDs

Sven Schad, M. Scherer, M. Seyboth,

physica status solidi (a)

2001

26

Time resolved study of laser diode characteristics during pulsed operation

Christoph Eichler, Sven‐Silvius Schad, M. Seyboth,

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

2003

18

Determination of dislocation density in epitaxially grown GaN using an HCl etching process

Frank Habel, M. Seyboth

Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics

2003

14

Ohmic Heating of InGaN LEDs during Operation: Determination of the Junction Temperature and Its Influence on Device Performance

V. Schwegler, Sven Schad, C. Kirchner,

physica status solidi (a)

1999

14

Absorption and Light Scattering in InGaN-on-Sapphire- and AlGaInP-Based Light-Emitting Diodes

Sven Schad, Barbara Neubert, Christoph Eichler,

Journal of Lightwave Technology

2004

13

First AlGaN/GaN metal oxide semiconductor heterostructurefieldeffect transistor based on photoanodic oxide

T. Rotter, D. Mistele, J. Stemmer,

Electronics Letters

2001

11

Influence of growth parameters on crack density in thick epitaxially lateral overgrown GaN layers by hydride vapor phase epitaxy

Chengxin Wang, Hinyiu Anthony Chung, M. Seyboth,

Journal of Crystal Growth

2001

10

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