M. Seyboth

Transient characteristics of gan-based heterostructure field-effect transistors

E. Kohn, I. Daumiller, M. Kunze et al. · IEEE Transactions on Microwave Theory and Techniques · 2003 · 70 citations

Wide-bandgap Semiconductor, Electronic Transients, Electrical Engineering +13

First AlGaN/GaN MOSFET with photoanodic gate dielectric

D. Mistele, T. Rotter, K.S. Röver et al. · Materials Science and Engineering B · 2002 · 48 citations

Electrical Engineering, Engineering, Applied Physics +4

Extraction Efficiency of GaN-Based LEDs

Sven Schad, M. Scherer, M. Seyboth et al. · physica status solidi (a) · 2001 · 26 citations

Time resolved study of laser diode characteristics during pulsed operation

Christoph Eichler, Sven‐Silvius Schad, M. Seyboth et al. · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 18 citations

Gan-based Laser, Photonics, Electrical Engineering +15

Determination of dislocation density in epitaxially grown GaN using an HCl etching process

Frank Habel, M. Seyboth · Physica status solidi. C, Conferences and critical reviews/Physica status solidi. C, Current topics in solid state physics · 2003 · 14 citations · Full text

Materials Engineering, Wide-bandgap Semiconductor, Electrical Engineering +11