Publication | Closed Access
Time resolved study of laser diode characteristics during pulsed operation
18
Citations
4
References
2003
Year
Gan-based LaserPhotonicsElectrical EngineeringPulsed OperationEngineeringEmission WavelengthPhysicsLaser-induced BreakdownApplied PhysicsLaser ApplicationsAluminum Gallium NitrideGan Power DeviceThermal PropertiesPulsed Laser DepositionCategoryiii-v SemiconductorHigh-power LasersLaser DamageOptoelectronics
Under pulsed operation, time dependent spectral and electro-optical measurements on GaN-based laser diodes show a considerable red shift in the emission wavelength and a decreasing voltage drop across the device. These changes appear on a rather short time scale in the microsecond range. During a 3.7 microsecond long pulse, a temperature increase of approximately 50 K is obtained using different experimental methods. This value agrees well with numerical simulations based on the thermal properties of the material. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
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