V. Härle

Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN

Jin Seo Im, A. Moritz, Friedrich W. Steuber et al. · Applied Physics Letters · 1997 · 221 citations

Wide-bandgap Semiconductor, Engineering, Hole Effective Mass +17

Mechanisms of recombination in GaN photodetectors

F. Binet, Jean‐Yves Duboz, E. Rosencher et al. · Applied Physics Letters · 1996 · 159 citations

Photonics, Electrical Engineering, Gan Photodetector +12

Deep-level defects and <i>n</i>-type-carrier concentration in nitrogen implanted GaN

D. Haase, M. Schmid, W. Kürner et al. · Applied Physics Letters · 1996 · 154 citations

Materials Science, Semiconductor Technology, Electrical Engineering +10

Auger recombination in strained and unstrained InGaAs/InGaAsP multiple quantum-well lasers

Gregory D. Fuchs, C. Schiedel, A. Hangleiter et al. · Applied Physics Letters · 1993 · 131 citations

Phonon-assisted Auger Recombination, Photonics, Quantum Science +14

Optical detection of magnetic resonance in electron-irradiated GaN

Matthias Linde, S. J. Uftring, G. D. Watkins et al. · Physical review. B, Condensed matter · 1997 · 117 citations

Displaced Ga Atom, Photoluminescence, Engineering +13