F. Binet

Mechanisms of recombination in GaN photodetectors

F. Binet, Jean‐Yves Duboz, E. Rosencher et al. · Applied Physics Letters · 1996 · 159 citations

Photonics, Electrical Engineering, Gan Photodetector +12

High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition

F. Binet, J.-Y. Duboz, J. Off et al. · Physical review. B, Condensed matter · 1999 · 110 citations

Wide-bandgap Semiconductor, Quantum Science, Photoluminescence +11

Properties of a photovoltaic detector based on an n-type GaN Schottky barrier

F. Binet, J. Y. Duboz, Nicolas Laurent et al. · Journal of Applied Physics · 1997 · 53 citations

Wide-bandgap Semiconductor, Engineering, Photovoltaic Devices +17

Diffusion length of photoexcited carriers in GaN

J.-Y. Duboz, F. Binet, Daniel Dolfi et al. · Materials Science and Engineering B · 1997 · 43 citations

Engineering, Diffusion Length, Physics +4

Influence of Surface Defects on the Characteristics of GaN Schottky Diodes

J. Y. Duboz, F. Binet, Nicolas Laurent et al. · MRS Proceedings · 1996 · 38 citations

Semiconductor Technology, Wide-bandgap Semiconductor, Electrical Engineering +6