Influence of Surface Defects on the Characteristics of GaN Schottky Diodes

InGaN-Based Multi-Quantum-Well-Structure Laser Diodes

Shuji Nakamura, Masayuki Senoh, Shin‐ichi Nagahama et al. · Japanese Journal of Applied Physics · 1996 · 2.5K citations

Engineering, Materials Engineering, Materials Science +17

Superbright Green InGaN Single-Quantum-Well-Structure Light-Emitting Diodes

Shuji Nakamura, Masayuki Senoh, Naruhito Iwasa et al. · Japanese Journal of Applied Physics · 1995 · 1.1K citations

Engineering, Electrical Engineering, Materials Science +17

High barrier height GaN Schottky diodes: Pt/GaN and Pd/GaN

Lei Wang, M. I. Nathan, T-H. Lim et al. · Applied Physics Letters · 1996 · 258 citations

Engineering, Electrical Engineering, Materials Science +17

Schottky barrier properties of various metals on n-type GaN

A. C. Schmitz, A. T. Ping, M. Asif Khan et al. · Semiconductor Science and Technology · 1996 · 196 citations

Engineering, Materials Engineering, Materials Science +17

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

M. Asif Khan, Q. Chen, Jinwei Yang et al. · IEEE Electron Device Letters · 1996 · 180 citations

Engineering, Electrical Engineering, Materials Science +17