R.L. Aulombard

Raman determination of phonon deformation potentials in α-GaN

F. Demangeot, J. Frandon, M. A. Renucci et al. · Solid State Communications · 1996 · 185 citations

Raman Determination, Physics, Applied Physics +2

Interplay of electrons and phonons in heavily doped GaN epilayers

F. Demangeot, J. Frandon, M. A. Renucci et al. · Journal of Applied Physics · 1997 · 123 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +12

Gallium vacancies and the growth stoichiometry of GaN studied by positron annihilation spectroscopy

K. Saarinen, Petri Seppälä, J. Oila et al. · Applied Physics Letters · 1998 · 103 citations

Wide-bandgap Semiconductor, Engineering, Positron Annihilation Spectroscopy +16

Thermal stability of GaN investigated by Raman scattering

M. Kuball, F. Demangeot, J. Frandon et al. · Applied Physics Letters · 1998 · 79 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Engineering +7

Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions

F. Demangeot, J. Groenen, J. Frandon et al. · Applied Physics Letters · 1998 · 75 citations

Aluminium Nitride, Wide-bandgap Semiconductor, Optical Materials +18