F. Demangeot - Concepedia

Author

F. Demangeot

Université Toulouse III - Paul Sabatier

Also Known As

Demangeot, F., Demangeot, François, F Demangeot, F. Demangeot, Francois Demangeot, François Demangeot, Le Corre, Alain

Publications

2.3K

Citations

H-Index

Concepts

All Affiliations

Université Toulouse III - Paul Sabatier Centre National de la Recherche Scientifique Laboratoire de physique des Solides Université de Montpellier Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes

About

F. Demangeot is an author at Université Toulouse III - Paul Sabatier specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	26	38	1.6K
2	Applied Physics	26	39	1.8K
3	Natural Sciences	2	2	91
4	Chemistry	2	2	106
5	Medicine	1	1	27

F. Demangeot

Publications

2.1K

Citations

H-Index

Page 1

	Year	Citations
Current status of AlInN layers lattice-matched to GaN for photonics and electronics R. Butté, J.‐F. Carlin, E. Feltin, Journal of Physics D Applied Physics	2007	325
Raman determination of phonon deformation potentials in α-GaN F. Demangeot, J. Frandon, M. A. Renucci, Solid State Communications Raman DeterminationPhysicsApplied PhysicsPhononGan Power Device	1996	185
Interplay of electrons and phonons in heavily doped GaN epilayers F. Demangeot, J. Frandon, M. A. Renucci, Journal of Applied Physics Materials ScienceSemiconductorsWide-bandgap SemiconductorSemiconductor TechnologyEngineering	1997	123
Anisotropy effects on polar optical phonons in wurtzite GaN/AlN superlattices J. Gleize, M. A. Renucci, J. Frandon, Physical review. B, Condensed matter Materials ScienceAluminium NitrideEngineeringPhysicsOptical Properties	1999	111
Molecular-beam epitaxy of gallium nitride on (0001) sapphire substrates using ammonia N. Grandjean, J. Massies, P. Vennéguès, Journal of Applied Physics Materials ScienceWide-bandgap SemiconductorMolecular-beam EpitaxyEngineeringResidual Impurity Levels	1998	84
Thermal stability of GaN investigated by Raman scattering M. Kuball, F. Demangeot, J. Frandon, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorEngineeringOptical PropertiesApplied Physics	1998	79
Coupling of GaN- and AlN-like longitudinal optic phonons in Ga1−xAlxN solid solutions F. Demangeot, J. Groenen, J. Frandon, Applied Physics Letters Aluminium NitrideWide-bandgap SemiconductorOptical MaterialsEngineeringMacroscopic Electric Field	1998	75
Phonons in a strained hexagonal GaN–AlN superlattice J. Gleize, F. Demangeot, J. Frandon, Applied Physics Letters Materials ScienceWide-bandgap SemiconductorAluminium NitrideEngineeringSuperlattice Layers	1999	75
GaN nanoindentation: A micro-Raman spectroscopy study of local strain fields Pascal Puech, F. Demangeot, J. Frandon, Journal of Applied Physics EngineeringGan NanoindentationsNanometrologyResidual StrainsNanoscale Science	2004	65
Phonon deformation potentials in hexagonal GaN F. Demangeot, J. Frandon, P. Baulés, Physical Review B SemiconductorsMaterials ScienceWide-bandgap SemiconductorEngineeringPhonon Deformation Potentials	2004	64

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