J. Frandon

Current status of AlInN layers lattice-matched to GaN for photonics and electronics

R. Butté, J.‐F. Carlin, E. Feltin et al. · Journal of Physics D Applied Physics · 2007 · 325 citations · Full text

Raman determination of phonon deformation potentials in α-GaN

F. Demangeot, J. Frandon, M. A. Renucci et al. · Solid State Communications · 1996 · 185 citations

Raman Determination, Physics, Applied Physics +2

Interplay of electrons and phonons in heavily doped GaN epilayers

F. Demangeot, J. Frandon, M. A. Renucci et al. · Journal of Applied Physics · 1997 · 123 citations

Materials Science, Semiconductors, Wide-bandgap Semiconductor +12

Anisotropy effects on polar optical phonons in wurtzite GaN/AlN superlattices

J. Gleize, M. A. Renucci, J. Frandon et al. · Physical review. B, Condensed matter · 1999 · 111 citations

Materials Science, Aluminium Nitride, Engineering +14

Phonon deformation potentials of wurtzite AlN

J. Gleize, M. A. Renucci, J. Frandon et al. · Journal of Applied Physics · 2003 · 99 citations

Materials Science, Materials Engineering, Aluminium Nitride +14