M. Kuball

Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

J. W. Pomeroy, Mirko Bernardoni, D.C. Dumka et al. · Applied Physics Letters · 2014 · 180 citations · Full text

Wide-bandgap Semiconductor, Current Gan-on-diamond Transistors, Electrical Engineering +14

Thermal stability of GaN investigated by Raman scattering

M. Kuball, F. Demangeot, J. Frandon et al. · Applied Physics Letters · 1998 · 79 citations · Full text

Materials Science, Wide-bandgap Semiconductor, Engineering +7

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Miguel Montes Bajo, Chris Hodges, Michael J. Uren et al. · Applied Physics Letters · 2012 · 70 citations · Full text

Surface Pits, Wide-bandgap Semiconductor, Electrical Engineering +12

Gain spectroscopy on InGaN/GaN quantum well diodes

M. Kuball, E.-S. Jeon, Y.-K. Song et al. · Applied Physics Letters · 1997 · 62 citations

Photonics, Photoluminescence, Engineering +11

Crystal growth and properties of scandium nitride

Zheng Gu, James H. Edgar, James W. Pomeroy et al. · Journal of Materials Science Materials in Electronics · 2004 · 58 citations

Materials Science, Inorganic Chemistry, Engineering +4