Low thermal resistance GaN-on-diamond transistors characterized by three-dimensional Raman thermography mapping

J. W. Pomeroy, Mirko Bernardoni, D.C. Dumka, +2

Applied Physics Letters

Wide-bandgap SemiconductorCurrent Gan-on-diamond TransistorsElectrical EngineeringDiamond-like CarbonEngineering +12

Thermal stability of GaN investigated by Raman scattering

M. Kuball, F. Demangeot, J. Frandon, +5

Applied Physics Letters

Materials ScienceWide-bandgap SemiconductorEngineeringOptical PropertiesApplied Physics +5

On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress

Miguel Montes Bajo, Chris Hodges, Michael J. Uren, +1

Applied Physics Letters

Surface PitsWide-bandgap SemiconductorElectrical EngineeringEngineeringSurface Defects +10

Gain spectroscopy on InGaN/GaN quantum well diodes

M. Kuball, E.-S. Jeon, Y.-K. Song, +8

Applied Physics Letters

PhotonicsPhotoluminescenceEngineeringBlue Laser ActionPhysics +9

Crystal growth and properties of scandium nitride

Zheng Gu, James H. Edgar, James W. Pomeroy, +2

Journal of Materials Science Materials in Electronics

Materials ScienceInorganic ChemistryEngineeringCrystal Growth TechnologySolid-state Chemistry +2

InN Thin Film Lattice Dynamics by Grazing Incidence Inelastic X-Ray Scattering

J. Serrano, Alexeï Bosak, M. Krisch, +6

Physical Review Letters

Materials ScienceAluminium NitrideX-ray SpectroscopyEngineeringPhysics +13

Angular dispersion of polar phonons in a hexagonal GaN–AlN superlattice

J. Gleize, J. Frandon, F. Demangeot, +5

Materials Science and Engineering B

Materials ScienceAluminium NitrideEngineeringPhysicsApplied Physics +6

High-temperature processing of GaN: The influence of the annealing ambient on strain in GaN

Joseph M. Hayes, M. Kuball, A. Bell, +3

Applied Physics Letters

Wide-bandgap SemiconductorEngineeringWater VaporMicro-raman ScatteringNanoelectronics +14

Raman mapping of epitaxial lateral overgrown GaN: Stress at the coalescence boundary

M. Kuball, Mohamed Benyoucef, B. Beaumont, +1

Journal of Applied Physics

Materials ScienceMaterials EngineeringWide-bandgap SemiconductorEpitaxial GrowthEngineering +11

High-pressure high-temperature annealing of ion-implanted GaN films monitored by visible and ultraviolet micro-Raman scattering

M. Kuball, Joseph M. Hayes, T. Suski, +6

Journal of Applied Physics

Materials ScienceLayer ThicknessElectrical EngineeringWide-bandgap SemiconductorEngineering +8