Applied Physics Letters · 1997 · 62 citations · 9 references
EngineeringMaterials SciencePhysicsSemiconductor DevicesSemiconductor MaterialsSpectroscopyOptical Properties Of SemiconductorsQuantum WellsSemiconductor Device MaterialsSemiconductor LasersSemiconductor PhysicsWide-bandgap SemiconductorsCurrent InjectionElectronic Density Of StatesExcited Electronic StatesGallium Nitride (Gan) MaterialsQuantum Well GainQuantum Well HeterostructuresQuantum Well LasersSpectral Characteristics
We have investigated spectroscopically the emergence of gain in InGaN/GaN quantum well diodes under high current injection (>kA/cm2). The spectral characteristics suggest that the electronic states responsible for blue laser action in this material are strongly influenced by the presence of microscopic crystalline disorder.
9
Spatial distribution of the luminescence in GaN thin films
F. A. Ponce, D. P. Bour, Werner Götz et al. · Applied Physics Letters · 1996 · 361 citations
Natural Sciences, Materials Engineering, Materials Science +17