Diffusion length of photoexcited carriers in GaN

High-responsivity photoconductive ultraviolet sensors based on insulating single-crystal GaN epilayers

M. Asif Khan, J. N. Kuznia, D. T. Olson et al. · Applied Physics Letters · 1992 · 387 citations

Engineering, Materials Engineering, Materials Science +15

Blue-Green Light-Emitting Diodes and Violet Laser Diodes

Shuji Nakamura · MRS Bulletin · 1997 · 172 citations

Engineering, Electrical Engineering, Materials Science +14

Steady-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAs

D. Ritter, K. Weiser, E. Zeldov · Journal of Applied Physics · 1987 · 165 citations

Engineering, Electrical Engineering, Materials Science +17

Mechanisms of recombination in GaN photodetectors

F. Binet, Jean‐Yves Duboz, E. Rosencher et al. · Applied Physics Letters · 1996 · 159 citations

Engineering, Electrical Engineering, Materials Science +14

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Leonid Chernyak, A. Osinsky, H. Temkin et al. · Applied Physics Letters · 1996 · 143 citations

Engineering, Materials Engineering, Materials Science +17