H. Temkin

Electron beam induced current measurements of minority carrier diffusion length in gallium nitride

Leonid Chernyak, A. Osinsky, H. Temkin et al. · Applied Physics Letters · 1996 · 143 citations

Engineering, Materials Engineering, Materials Science +17

Gas source MBE of InP and Ga<i>x</i>In1−<i>x</i>P<i>y</i>As1−<i>y</i> : Materials properties and heterostructure lasers

M. B. Panish, H. Temkin, S. Sumski · Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena · 1985 · 129 citations

Engineering, Materials Engineering, Materials Science +16

Enhanced strain relaxation in Si/Ge<i>x</i>Si1−<i>x</i>/Si heterostructures via point-defect concentrations introduced by ion implantation

R. Hull, J. C. Bean, J. M. Bonar et al. · Applied Physics Letters · 1990 · 81 citations

Engineering, Materials Engineering, Materials Science +17

Research on nonlinear optical materials: an assessment

D. H. Auston, A. A. Ballman, P. Bhattacharya et al. · Applied Optics · 1987 · 54 citations

Natural Sciences, Materials Science, Physics +16

Ga0.47In0.53As ultrahigh gain, high sensitivity photoconductors grown by chloride vapor-phase epitaxy

A. Antreasyan, P. A. Garbinski, V. D. Mattera et al. · Journal of Applied Physics · 1986 · 36 citations

Engineering, Electrical Engineering, Materials Science +16