P. A. Garbinski

Modulated barrier photodiode: A new majority-carrier photodetector

C. Y. Chen, A. Y. Cho, P. A. Garbinski et al. · Applied Physics Letters · 1981 · 61 citations

Photonics, Electrical Engineering, Bipolar Phototransistor +12

Charge injection logic

Serge Luryi, P. M. Mensz, M.R. Pinto et al. · Applied Physics Letters · 1990 · 58 citations

Charge Injection Transistor, Electrical Engineering, Engineering +14

Spatial resolution of the capacitance-voltage profiling technique on semiconductors with quantum confinement

E. F. Schubert, R. F. Kopf, J. M. Kuo et al. · Applied Physics Letters · 1990 · 57 citations

Engineering, Semiconductor Materials, Semiconductor Device +17

High transconductance and large peak-to-valley ratio of negative differential conductance in three-terminal InGaAs/InAlAs real-space transfer devices

P. M. Mensz, P. A. Garbinski, Alfred Y. Cho et al. · Applied Physics Letters · 1990 · 54 citations

Wide-bandgap Semiconductor, Engineering, Inalas Barrier Layer +18

Ultrahigh speed modulation-doped heterostructure field-effect photodetectors

C. Y. Chen, A. Y. Cho, C. G. Bethea et al. · Applied Physics Letters · 1983 · 42 citations

Photonics, Electrical Engineering, Optical Materials +15