Steady-state photocarrier grating technique for diffusion-length measurement in semiconductors: Theory and experimental results for amorphous silicon and semi-insulating GaAs

Abstract

The theory underlying the steady-state photocarrier grating technique is presented, including the effect of surface recombination. Experimental results for amorphous hydrogenated silicon and semi-insulating GaAs prove that diffusion lengths ranging from 200 Å to 10 μm can be measured with an accuracy of better than 5%.