J. Off

The role of piezoelectric fields in GaN-based quantum wells

A. Hangleiter, Jin Seo Im, H. Kollmer et al. · MRS Internet Journal of Nitride Semiconductor Research · 1998 · 143 citations · Full text

High-excitation photoluminescence in GaN: Hot-carrier effects and the Mott transition

F. Binet, J.-Y. Duboz, J. Off et al. · Physical review. B, Condensed matter · 1999 · 110 citations

Wide-bandgap Semiconductor, Quantum Science, Photoluminescence +11

Anisotropic strain and phonon deformation potentials in GaN

Vanya Darakchieva, T. Paskova, M. Schubert et al. · Physical Review B · 2007 · 107 citations

Materials Science, Optical Materials, Engineering +14

Intra- and interwell transitions in GaInN/GaN multiple quantum wells with built-in piezoelectric fields

H. Kollmer, Jin Seo Im, S. Heppel et al. · Applied Physics Letters · 1999 · 65 citations

Built-in Piezoelectric Fields, Photonics, Dominant Emission Lines +13

Characterization of InGaN thin films using high-resolution x-ray diffraction

L. Görgens, O. Ambacher, M. Stutzmann et al. · Applied Physics Letters · 2000 · 59 citations

Materials Science, Materials Engineering, Electrical Engineering +15