Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2013 · 72 citations · 38 references
Natural SciencesMaterials EngineeringMaterials ScienceMetrologyNanotechnologySurface ScienceAtomic Force MicroscopyElectron MicroscopyOptical MetrologyScanning Probe MicroscopySmall-angle ScatteringSurface MicroscopyAtomic Force Microscopy MetrologyCritical Dimension MetrologyMicroscopyNano-metrologyScanning Electron Microscope MetrologyScanning Electron MicroscopySemiconductor MetrologySmall-angle X-ray Scattering
This paper will examine the future for critical dimension (CD) metrology. First, we will present the extensive list of applications for which CD metrology solutions are needed, showing commonalities and differences among the various applications. We will then report on the expected technical limits of the metrology solutions currently being investigated by SEMATECH and others in the industry to address the metrology challenges of future nodes, including conventional CD scanning electron microscopy (CD-SEM) and optical critical dimension (OCD) metrology and new potential solutions such as He-ion microscopy (HeIM, sometimes elsewhere referred to as HIM), CD atomic force microscopy (CD-AFM), CD small-angle x-ray scattering (CD-SAXS), high-voltage scanning electron microscopy (HV-SEM), and other types. A technical gap analysis matrix will then be demonstrated, showing the current state of understanding of the future of the CD metrology space.
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Tri-Gate fully-depleted CMOS transistors: fabrication, design and layout
Barry M. Doyle, B. I. Boyanov, Suman Datta et al. · 2004 · 219 citations