Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs

New and unified model for Schottky barrier and III–V insulator interface states formation

W. E. Spicer, P. W. Chye, Perry Skeath et al. · Journal of Vacuum Science and Technology · 1979 · 930 citations

Engineering, Materials Engineering, Materials Science +17

Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy

Jonathan Hu, Xinji Xu, J. A. H. Stotz et al. · Applied Physics Letters · 1998 · 148 citations

Engineering, Materials Engineering, Materials Science +17

Analysis of the operation of GaAlAs/GaAs HBTs

S. Tiwari, D.J. Frank · IEEE Transactions on Electron Devices · 1989 · 117 citations

Engineering, Electrical Engineering, Materials Science +17

Heavily carbon-doped GaAsSb grown on InP for HBT applications

S. P. Watkins, O. J. Pitts, Cameron Dale et al. · Journal of Crystal Growth · 2000 · 71 citations

Engineering, Electrical Engineering, Physics +14

Non-blocking collector InP/GaAs/sub 0.51/Sb/sub 0.49//InP double heterojunction bipolar transistors with a staggered lineup base-collector junction

C. R. Bolognesi, N. Matine, R.W. Dvorak et al. · IEEE Electron Device Letters · 1999 · 43 citations

Engineering, Electrical Engineering, Physics +17