N.G. Tao

Surface Recombination Currents in “Type-II” NpN InP–GaAsSb–InP Self-Aligned DHBTs

N.G. Tao, H. Liu, C. R. Bolognesi · IEEE Transactions on Electron Devices · 2005 · 40 citations

Engineering, Electrical Engineering, Materials Science +15

Extraction of the Average Collector Velocity in High-Speed “Type-II” InP–GaAsSb–InP DHBTs

H.G. Liu, N.G. Tao, S. P. Watkins et al. · IEEE Electron Device Letters · 2004 · 27 citations

Engineering, Electrical Engineering, Materials Science +14

Impact of surface state modeling on the characteristics of InP/GaAsSb/InP DHBTs

N.G. Tao, H.G. Liu, C. R. Bolognesi · Solid-State Electronics · 2007 · 20 citations

Engineering, Electrical Engineering, Materials Science +14

High-performance InP/GaAsSb/InP DHBTs grown by MOCVD on 100mm InP substrates using PH3 and AsH3

H.G Liu, J.Q Wu, N.G. Tao et al. · Journal of Crystal Growth · 2004 · 20 citations

Engineering, Electrical Engineering, Materials Science +11

Neutral base recombination in InP∕GaAsSb∕InP double-heterostructure bipolar transistors: Suppression of Auger recombination in p+ GaAsSb base layers

C. R. Bolognesi, Hongxu Liu, N.G. Tao et al. · Applied Physics Letters · 2005 · 14 citations

Engineering, Electrical Engineering, Materials Science +17