Concepedia

HgCdTe on Si: Present status and novel buffer layer concepts

T. D. Golding, O. W. Holland, M. J. Kim, J. H. Dinan, L. A. Almeida, J. M. Arias, J. Bajaj, H. D. Shih, W. P. Kirk

Journal of Electronic Materials · 2003 · 16 citations · 19 references

DOI

Concepts

References

19

Defects in epitaxial multilayers I. Misfit dislocations

Jacqueline M. Matthews · Journal of Crystal Growth · 1974 · 3.1K citations

, , +14

Silicon on insulator material technology

M. Bruel · Electronics Letters · 1995 · 1K citations

, , +16

New approach to the growth of low dislocation relaxed SiGe material

Adrian R. Powell, Subramanian S. Iyer, F. K. LeGoues · Applied Physics Letters · 1994 · 181 citations

, , +17

Novel oxidation process in Ge+-implanted Si and its effect on oxidation kinetics

O. W. Holland, C. W. White, D. Fathy · Applied Physics Letters · 1987 · 109 citations

, , +17

Compliant substrates: A comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides

Karl D. Hobart, Fritz J. Kub, M. Fatemi et al. · Journal of Electronic Materials · 2000 · 88 citations

, , +17