L. A. Almeida

High quality large-area CdTe(211)B on Si(211) grown by molecular beam epitaxy

Saroj Rujirawat, L. A. Almeida, Y. P. Chen et al. · Applied Physics Letters · 1997 · 72 citations

Materials Science, Semiconductors, Materials Engineering +12

CdZnTe heteroepitaxy on 3″ (112) Si: Interface, surface, and layer characteristics

Nibir K. Dhar, P. R. Boyd, M. Martinka et al. · Journal of Electronic Materials · 2000 · 55 citations

Materials Science, Semiconductors, Oxide Heterostructures +9

Role of thermal expansion matching in CdTe heteroepitaxy on highly lattice-mismatched substrates

R. N. Jacobs, J. K. Markunas, J. Pellegrino et al. · Journal of Crystal Growth · 2008 · 40 citations

Materials Science, Ii-vi Semiconductor, Engineering +8

Growth and Analysis of HgCdTe on Alternate Substrates

J. D. Benson, L. O. Bubulac, Peter J. Smith et al. · Journal of Electronic Materials · 2012 · 36 citations

Materials Engineering, Engineering, Surface Science +3

Growth of high quality CdTe on Si substrates by molecular beam epitaxy

L. A. Almeida, Y. P. Chen, J. P. Faurie et al. · Journal of Electronic Materials · 1996 · 32 citations

Materials Engineering, Materials Science, Engineering +8