Spectroscopic ellipsometry study on initial growth stages of GaN films on GaAs(0 0 1) in low-pressure MOVPE

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Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

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Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 226 citations

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MOVPE growth of cubic GaN on GaAs using dimethylhydrazine

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MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

S Miyoshi, Kentaro Onabe, N. Ohkouchi et al. · Sixth International Conference Metalorganic Vapor Phase Epitaxy · 2005 · 120 citations

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