MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

An investigation of the properties of cubic GaN grown on GaAs by plasma-assisted molecular-beam epitaxy

S. Strite, J. Ruan, Z. Li et al. · Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena · 1991 · 328 citations

Engineering, Materials Science, Physics +17

Low Temperature Growth of GaN and AlN on GaAs Utilizing Metalorganics and Hydrazine

M. Mizuta, Shinji Fujieda, Yoshishige Matsumoto et al. · Japanese Journal of Applied Physics · 1986 · 243 citations

Engineering, Materials Engineering, Materials Science +17

Epitaxial growth of cubic and hexagonal GaN on GaAs by gas-source molecular-beam epitaxy

Hajime Okumura, S. Misawa, S. Yoshida · Applied Physics Letters · 1991 · 226 citations

Engineering, Materials Engineering, Materials Science +17