R. Ito

Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Koji Muraki, S. Fukatsu, Y. Shiraki et al. · Applied Physics Letters · 1992 · 480 citations

Semiconductors, Optical Materials, Engineering +14

Transverse mode stabilized Al<inf>x</inf>Ga<inf>1-x</inf>As injection lasers with channeled-substrate-planar structure

K. Aiki, M. Nakamura, T. Kuroda et al. · IEEE Journal of Quantum Electronics · 1978 · 229 citations

Wide-bandgap Semiconductor, Engineering, Laser Science +24

Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

S. Fukatsu, Ken Fujita, Hiroyuki Yaguchi et al. · Applied Physics Letters · 1991 · 217 citations

Materials Science, Semiconductors, Ge Surface Segregation +11

Longitudinal-mode behaviors of mode-stabilized Al<i>x</i>Ga1−<i>x</i>As injection lasers

M. Nakamura, K. Aiki, N. Chinone et al. · Journal of Applied Physics · 1978 · 184 citations

Engineering, Laser Science, Laser Physics +20

MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

S Miyoshi, Kentaro Onabe, N. Ohkouchi et al. · Sixth International Conference Metalorganic Vapor Phase Epitaxy · 2005 · 120 citations

Electrical Engineering, Engineering, Applied Physics +3