Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells

Koji Muraki, S. Fukatsu, Y. Shiraki, +1

Applied Physics Letters

SemiconductorsOptical MaterialsEngineeringPhotoluminescencePhysics +12

Transverse mode stabilized Al<inf>x</inf>Ga<inf>1-x</inf>As injection lasers with channeled-substrate-planar structure

K. Aiki, M. Nakamura, T. Kuroda, +4

IEEE Journal of Quantum Electronics

Wide-bandgap SemiconductorEngineeringLaser ScienceLaser ApplicationsLaser Physics +22

Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth

S. Fukatsu, Ken Fujita, Hiroyuki Yaguchi, +2

Applied Physics Letters

Materials ScienceSemiconductorsGe Surface SegregationEngineeringPhysics +9

Longitudinal-mode behaviors of mode-stabilized Al<i>x</i>Ga1−<i>x</i>As injection lasers

M. Nakamura, K. Aiki, N. Chinone, +2

Journal of Applied Physics

EngineeringLaser ScienceLaser PhysicsLaser ApplicationsLaser Material +18

MOVPE Growth of Cubic GaN on GaAs Using Dimethylhydrazine

S Miyoshi, Kentaro Onabe, N. Ohkouchi, +4

Sixth International Conference Metalorganic Vapor Phase Epitaxy

Electrical EngineeringEngineeringApplied PhysicsMovpe GrowthGan Power Device +1

Determination of quadratic nonlinear optical coefficient of Al<i>x</i>Ga1−<i>x</i>As system by the method of reflected second harmonics

Makoto Ohashi, Takashi Kondo, R. Ito, +4

Journal of Applied Physics

PhotonicsOptical MaterialsEngineeringAl ContentPhysics +13

Metalorganic vapor phase epitaxy of GaP1−<i>x</i>N<i>x</i> alloys on GaP

S Miyoshi, Hiroyuki Yaguchi, Kentaro Onabe, +2

Applied Physics Letters

Materials ScienceMaterials EngineeringOptical MaterialsEngineeringPhotoluminescence +10

Buried-heterostructure AlGaAs lasers

Katsuaki Saito, R. Ito

IEEE Journal of Quantum Electronics

PhotonicsOptical MaterialsBuried-heterostructure Algaas LasersEngineeringOptical Properties +10

Photoluminescence properties of cubic GaN grown on GaAs(100) substrates by metalorganic vapor phase epitaxy

Jun Wu, Hiroyuki Yaguchi, Kentaro Onabe, +2

Applied Physics Letters

Wide-bandgap SemiconductorElectrical EngineeringOptical MaterialsEngineeringPhotoluminescence +12

Effects of lateral mode and carrier density profile on dynamic behaviors of semiconductor lasers

N. Chinone, K. Aiki, M. Nakamura, +1

IEEE Journal of Quantum Electronics

Dynamic BehaviorsLateral ModeEngineeringLaser ScienceLaser Physics +14