Solid-State Electronics · 2010 · 43 citations · 12 references
EngineeringElectrical EngineeringMicroelectronicsSemiconductor DevicesDevice SimulationShort-channel EffectsGate Oxide Thickness EffectsGate-all-around TransistorsGate-dependent Current-voltage BehaviorSubthreshold ConductionSubthreshold Conduction ModelingSurface Potential Analysis
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Jean-Pierre Colinge · Solid-State Electronics · 2004 · 936 citations
Scaling theory for double-gate SOI MOSFET's
Ken Suzuki, Tetsu Tanaka, Y. Tosaka et al. · IEEE Transactions on Electron Devices · 1993 · 556 citations · Full text
Engineering, Electrical Engineering, Electronic Materials +16
Seonghoon Jin, Massimo V. Fischetti, Ting-wei Tang · Journal of Applied Physics · 2007 · 315 citations
Continuous Analytic I–V Model for Surrounding-Gate MOSFETs
David Jiménez, J. Suñé, Lluı́s F. Marsal et al. · IEEE Electron Device Letters · 2004 · 280 citations
Engineering, Electrical Engineering, Electronic Materials +16