Seonghoon Jin

Modeling of electron mobility in gated silicon nanowires at room temperature: Surface roughness scattering, dielectric screening, and band nonparabolicity

Seonghoon Jin, Massimo V. Fischetti, Ting-wei Tang · Journal of Applied Physics · 2007 · 311 citations

Engineering, Charge Transport, Semiconductor Device +18

A three-dimensional simulation of quantum transport in silicon nanowire transistor in the presence of electron-phonon interactions

Seonghoon Jin, Young June Park, Hong Shick Min · Journal of Applied Physics · 2006 · 190 citations

Engineering, Silicon Nanowire Transistor, Computational Complexity +18

Modeling of Surface-Roughness Scattering in Ultrathin-Body SOI MOSFETs

Seonghoon Jin, Massimo V. Fischetti, Ting-wei Tang · IEEE Transactions on Electron Devices · 2007 · 164 citations

Device Modeling, Electrical Engineering, Finite Barrier Height +12

Theoretical Study of Some Physical Aspects of Electronic Transport in nMOSFETs at the 10-nm Gate-Length

Massimo V. Fischetti, Terrance P. O’Regan, Sudarshan Narayanan et al. · IEEE Transactions on Electron Devices · 2007 · 117 citations

Engineering, Charge Transport, Semiconductor Device +17

Simulation of Silicon Nanowire Transistors Using Boltzmann Transport Equation Under Relaxation Time Approximation

Seonghoon Jin, Ting-wei Tang, Massimo V. Fischetti · IEEE Transactions on Electron Devices · 2008 · 96 citations

Engineering, Nanocomputing, Semiconductor Device +16