Subthreshold Conduction Modeling

Subthreshold Conduction Modeling is a semiconductor device modeling methodology that characterizes the weak-inversion current-voltage behavior of field-effect transistors below the threshold voltage, enabling accurate prediction of leakage currents and low-power circuit performance in nanoscale integrated circuits.

101

Publications

5.3K

Citations

273

Authors

98

Institutions

Publications per year

2017–2026

14

Variants

Weak Inversion Modeling

Authors

273

  1. SJ
    Satyabrata Jit

    Banaras Hindu University, India

    7 publications · 128 citations

    7

    h-index

  2. PK
    Pramod Kumar Tiwari

    Indian Institute of Technology Patna, India

    6 publications · 102 citations

    6

    h-index

  3. TC
    Te‐Kuang Chiang

    National University of Kaohsiung, Taiwan

    5 publications · 134 citations

    5

    h-index

  4. JM
    J.D. Meindl

    Georgia Institute of Technology, United States

    5 publications · 305 citations

    5

    h-index

  5. MG
    Mridula Gupta

    University of Delhi, India

    4 publications · 89 citations

    4

    h-index

1–5 of 273

Venues

  1. Solid-State Electronics

    22 publications · 853 citations

    16

    h-index

  2. IEEE Transactions on Electron Devices

    15 publications · 1K citations

    13

    h-index

  3. Superlattices and Microstructures

    11 publications · 282 citations

    11

    h-index

  4. Microelectronics Reliability

    9 publications · 156 citations

    9

    h-index

  5. Journal of Computational Electronics

    5 publications · 93 citations

    5

    h-index

1–5