Chenyue Ma

A Charge-Based Model for Long-Channel Cylindrical Surrounding-Gate MOSFETs From Intrinsic Channel to Heavily Doped Body

Feng Liu, Jin He, Lining Zhang et al. · IEEE Transactions on Electron Devices · 2008 · 78 citations

Device Modeling, Electrical Engineering, Engineering +10

Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions

Chenyue Ma, Hans Jürgen Mattausch, Kazuya Matsuzawa et al. · IEEE Transactions on Device and Materials Reliability · 2014 · 46 citations

Universal Nbti Model, Engineering, Dynamic Nbti Effect +19

Analytical solution of subthreshold channel potential of gate underlap cylindrical gate-all-around MOSFET

Lining Zhang, Chenyue Ma, Jin He et al. · Solid-State Electronics · 2010 · 43 citations

Electrical Engineering, Engineering, Subthreshold Channel Potential +2

Zero-Mask Contact Fuse for One-Time-Programmable Memory in Standard CMOS Processes

Min Shi, Jin He, Lining Zhang et al. · IEEE Electron Device Letters · 2011 · 24 citations

Non-volatile Memory, Engineering, Emerging Memory Technology +21

ON-state critical gate overdrive voltage for fluorine-implanted enhancement-mode AlGaN/GaN high electron mobility transistors

Chenyue Ma, Hongwei Chen, Chunhua Zhou et al. · Journal of Applied Physics · 2011 · 19 citations

Wide-bandgap Semiconductor, Electrical Engineering, Electronic Devices +10