Kazuya Matsuzawa

On discrete random dopant modeling in drift-diffusion simulations: physical meaning of `atomistic' dopants

Nobuyuki Sano, Kazuya Matsuzawa, M. Mukai et al. · Microelectronics Reliability · 2002 · 102 citations

Natural Sciences, Materials Science, Physics +16

Enhancement of hot-electron generation rate in Schottky source metal–oxide–semiconductor field-effect transistors

Ken Uchida, Kazuya Matsuzawa, J. Koga et al. · Applied Physics Letters · 2000 · 51 citations

Engineering, Electrical Engineering, Materials Science +17

Universal NBTI Compact Model for Circuit Aging Simulation under Any Stress Conditions

Chenyue Ma, Hans Jürgen Mattausch, Kazuya Matsuzawa et al. · IEEE Transactions on Device and Materials Reliability · 2014 · 46 citations

Engineering, Electrical Engineering, Aging +16

Comprehensive Understanding of Electron and Hole Mobility Limited by Surface Roughness Scattering in Pure Oxides and Oxynitrides Based on Correlation Function of Surface Roughness

Takamitsu Ishihara, Kazuya Matsuzawa, Mariko Takayanagi et al. · Japanese Journal of Applied Physics · 2002 · 29 citations

Engineering, Electrical Engineering, Materials Science +13

Unified Transient and Frequency Domain Noise Simulation for Random Telegraph Noise and Flicker Noise Using a Physics-Based Model

Y. Higashi, N. Momo, Hiroki Sasaki et al. · IEEE Transactions on Electron Devices · 2014 · 17 citations

Engineering, Electrical Engineering, Microelectronics +16