Comparison of F2 plasma chemistries for deep etching of SiC

High rate etching of SiC using inductively coupled plasma reactive ion etching in SF6-based gas mixtures

Farid Khan, I. Adesida · Applied Physics Letters · 1999 · 146 citations

Natural Sciences, Materials Engineering, Materials Science +15

Dry etching of β-SiC in CF4 and CF4+O2 mixtures

John W. Palmour, R. F. Davis, T. M. Wallett et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1986 · 73 citations

Natural Sciences, Materials Engineering, Materials Science +17

Inductively coupled plasma etching of bulk 6H-SiC and thin-film SiCN in NF3 chemistries

J. J. Wang, E. S. Lambers, S. J. Pearton et al. · Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 1998 · 64 citations

Natural Sciences, Materials Engineering, Materials Science +14

Ultradeep, low-damage dry etching of SiC

H. Cho, P. Leerungnawarat, David C. Hays et al. · Applied Physics Letters · 2000 · 60 citations

Engineering, Electrical Engineering, Materials Science +17

High rate etching of 4H–SiC using a SF6/O2 helicon plasma

Pascal Chabert, N. Proust, J. Perrin et al. · Applied Physics Letters · 2000 · 60 citations

Engineering, Materials Engineering, Materials Science +15