Ultradeep, low-damage dry etching of SiC

Abstract

The Schottky barrier height (ΦB) and reverse breakdown voltage (VB) of Au/n-SiC diodes were used to examine the effect of inductively coupled plasma SF6/O2 discharges on the near-surface electrical properties of SiC. For low ion energies (⩽60 eV) in the discharge, there is minimal change in ΦB and VB, but both parameters degrade at higher energies. Highly anisotropic features typical of through-wafer via holes were formed in SiC using an Al mask.