David C. Hays - Concepedia

Author

David C. Hays

University of Florida ORCID

Also Known As

D Hays, D. C. Hays, D. HAYS, D. Hays, D.C Hays, D.C. Hays, David C Hays, David C. Hays, David Hays

Publications

1.3K

Citations

H-Index

Concepts

All Affiliations

University of Florida Sandia National Laboratories Dankook University Plasma Processes (United States)IBM Research - Almaden

About

David C. Hays is an author at University of Florida specializing in applied physics, engineering, and materials science.

Top Concepts

#	Concept	H-Index	Publications	Citations
1	Engineering	19	33	1K
2	Applied Physics	19	33	1K
3	Electrical Engineering	13	13	504
4	Chemical Engineering	3	3	57
5	Chemistry	1	1	33

David C. Hays

Publications

1.1K

Citations

H-Index

Page 1

	Year	Citations
Energy band offsets of dielectrics on InGaZnO4 David C. Hays, S. J. Pearton, F. Ren Applied Physics Reviews Optical MaterialsEngineeringValence Band OffsetsIntegrated CircuitsConduction Band Offsets	2017	91
Band alignment of Al2O3 with (−201) β-Ga2O3 Patrick H. Carey, F. Ren, David C. Hays, Vacuum Materials ScienceMaterials EngineeringEngineeringApplied PhysicsCondensed Matter Physics	2017	66
Ultradeep, low-damage dry etching of SiC H. Cho, P. Leerungnawarat, David C. Hays, Applied Physics Letters Materials EngineeringMaterials ScienceElectrical EngineeringSchottky Barrier HeightEngineering	2000	60
Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers Patrick H. Carey, Jiancheng Yang, F. Ren, Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena Materials ScienceOxide HeterostructuresElectrical EngineeringSurface CharacterizationEngineering	2017	60
Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au Patrick H. Carey, Jiancheng Yang, F. Ren, AIP Advances Materials ScienceMaterials EngineeringOxide HeterostructuresElectrical EngineeringEngineering	2017	59
Band offsets in ITO/Ga2O3 heterostructures Patrick H. Carey, F. Ren, David C. Hays, Applied Surface Science EngineeringPhysicsTopological HeterostructuresApplied PhysicsGallium Oxide	2017	52
Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas J. W. Lee, M. Devre, B. H. Reelfs, Journal of Vacuum Science & Technology A Vacuum Surfaces and Films Wide-bandgap SemiconductorEngineeringAlgaas LayerOptoelectronic DevicesPlasma Processing	2000	50
Valence and conduction band offsets in AZO/Ga2O3 heterostructures Patrick H. Carey, F. Ren, David C. Hays, Vacuum Materials ScienceEngineeringOxide ElectronicsApplied PhysicsCondensed Matter Physics	2017	48
Band alignment of atomic layer deposited SiO<sub>2</sub>and HfSiO<sub>4</sub>with $(\bar{2}01)$ β-Ga<sub>2</sub>O<sub>3</sub> Patrick H. Carey, F. Ren, David C. Hays, Japanese Journal of Applied Physics Materials ScienceOxide HeterostructuresEngineeringValence Band OffsetOxide Electronics	2017	45
Dry etching of GaN and related materials: comparison of techniques Jewon Lee, Hyun Cho, David C. Hays, IEEE Journal of Selected Topics in Quantum Electronics Feature AnisotropyWide-bandgap SemiconductorAluminium NitrideEngineeringHigh Density	1998	42

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