38
Publications
1.1K
Citations
20
H-Index
1997
Active since
David C. Hays is an author at University of Florida specializing in applied physics, engineering, and materials science.
Top concepts
EngineeringApplied PhysicsMaterial ScienceSurface ScienceElectrical EngineeringMaterials EngineeringOxide HeterostructuresPhysicsThin FilmsSemiconductors
Publications per year
1997–2022
38
38
Band alignment of Al2O3 with (−201) β-Ga2O3
Patrick H. Carey, F. Ren, David C. Hays et al. · Vacuum · 2017 · 66 citations
Ultradeep, low-damage dry etching of SiC
H. Cho, P. Leerungnawarat, David C. Hays et al. · Applied Physics Letters · 2000 · 60 citations
Materials Engineering, Materials Science, Electrical Engineering +11
Improvement of Ohmic contacts on Ga2O3 through use of ITO-interlayers
Patrick H. Carey, Jiancheng Yang, F. Ren et al. · Journal of Vacuum Science & Technology B Nanotechnology and Microelectronics Materials Processing Measurement and Phenomena · 2017 · 60 citations · Full text
Materials Science, Oxide Heterostructures, Electrical Engineering +13
Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au
Patrick H. Carey, Jiancheng Yang, F. Ren et al. · AIP Advances · 2017 · 59 citations · Full text
Materials Science, Materials Engineering, Oxide Heterostructures +13
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