Modeling of hot-carrier-stressed characteristics of nMOSFETs

Relationship between MOSFET degradation and hot-electron-induced interface-state generation

Fu‐Lan Hsu, Simon Tam · IEEE Electron Device Letters · 1984 · 210 citations

Engineering, Electrical Engineering, Materials Science +17

Lateral distribution of hot-carrier-induced interface traps in MOSFETs

Mario G. Ancona, N. S. Saks, D. McCarthy · IEEE Transactions on Electron Devices · 1988 · 172 citations

Engineering, Electrical Engineering, Materials Science +17

The relationship between Oxide charge and device degradation: A comparative study of n- and p- channel MOSFET's

A. v. Schwerin, W. Hänsch, W. Weber · IEEE Transactions on Electron Devices · 1987 · 149 citations

Engineering, Electrical Engineering, Microelectronics +16

Analysis on gate-oxide thickness dependence of hot-carrier-induced degradation in thin-gate oxide nMOSFET's

Y. Toyoshima, Hiroshi Iwai, F. Matsuoka et al. · IEEE Transactions on Electron Devices · 1990 · 66 citations

Engineering, Electrical Engineering, Materials Science +17

Modeling of nMOS transistors for simulation of hot-carrier-induced device and circuit degradation

Yusuf Leblebici, Sung‐Mo Kang · IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems · 1992 · 53 citations

Engineering, Electrical Engineering, Circuit Theory +16