2007 · 10 citations · 7 references
EngineeringElectrical EngineeringMicroelectronicsPower ElectronicsSemiconductor DevicesCurrent-voltage CharacteristicsDevice CharacterizationDevice ModelingDevice SimulationIntegrated Circuit DesignShort-channel EffectsCompact Model Parameter ExtractionCompact ModelingI-v Curve MeasurementModel ExtractionMosfet ModelingParameter ExtractionSelf-heating ModelingTemperature Dependence Of I-v Curves
A new methodology is proposed to extract self-heating free I-V curves, including the substrate current, of SOI MOSFETs based on triple-temperature, regular DC measurement. It is verified to be accurate with Hspice simulations and suitable for SPICE model parameter extraction. It is also demonstrated that extraction of self-heating free I-V curves is not only desired for efficient SPICE model generation, but also required to accurately capture the true temperature dependences in the models.
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Measurement and modeling of self-heating in SOI nMOSFET's
L.T. Su, J.E. Chung, D.A. Antoniadis et al. · IEEE Transactions on Electron Devices · 1994 · 331 citations
BSIMPD: a partial-depletion SOI MOSFET model for deep-submicron CMOS designs
Pin Su, S.K.H. Fung, Samuel Tang et al. · 2002 · 38 citations
Engineering, Computer Engineering, Electrical Engineering +17