Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Electron mobility in inversion and accumulation layers on thermally oxidized silicon surfaces

Shiyu Sun, J.D. Plummer · IEEE Transactions on Electron Devices · 1980 · 684 citations

Engineering, Electrical Engineering, Materials Science +17

Intrinsic SiC/SiO2 Interface States

V. V. Afanas’ev, Gerhard Pensl, Martin Schulz · physica status solidi (a) · 1997 · 643 citations

Natural Sciences, Materials Science, Physics +17

Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide

Gil Yong Chung, C. C. Tin, John R. Williams et al. · IEEE Electron Device Letters · 2001 · 633 citations

Engineering, Electrical Engineering, Materials Science +17

Advances in SiC MOS Technology

James A. Cooper · physica status solidi (a) · 1997 · 279 citations

Engineering, Electrical Engineering, Materials Science +17

Density of interface states, electron traps, and hole traps as a function of the nitrogen density in SiO2 on SiC

John Rozen, Sarit Dhar, M. E. Zvanut et al. · Journal of Applied Physics · 2009 · 179 citations

Engineering, Electrical Engineering, Materials Science +17