Aaron Modic

High-Mobility Stable 4H-SiC MOSFETs Using a Thin PSG Interfacial Passivation Layer

Yogesh Sharma, A. C. Ahyi, Tamara Isaacs‐Smith et al. · IEEE Electron Device Letters · 2013 · 81 citations

Engineering, Electrical Engineering, Materials Science +12

High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping

Aaron Modic, Gang Liu, A. C. Ahyi et al. · IEEE Electron Device Letters · 2014 · 63 citations

Engineering, Electrical Engineering, Materials Science +13

Growth of ZnO Nanorod Arrays on Flexible Substrates: Effect of Precursor Solution Concentration

Fei Tong, Kyusang Kim, Yaqi Wang et al. · ISRN Nanomaterials · 2012 · 25 citations · Full text

Natural Sciences, Materials Engineering, Materials Science +17

Nitrogen Plasma Processing of SiO2/4H-SiC Interfaces

Aaron Modic, Yogesh Sharma, Yi Xu et al. · Journal of Electronic Materials · 2014 · 19 citations

Engineering, Materials Engineering, Materials Science +14

Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

A. C. Ahyi, Aaron Modic, C. Jiao et al. · Materials science forum · 2015 · 14 citations · Full text

Engineering, Electrical Engineering, Materials Science +17